View ADG821BRM_376529.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

a
FEATURES 0.8 Max On Resistance @125 C 0.28 Max On Resistance Flatness @125 C 1.8 V to 5.5 V Single Supply 200 mA Current Carrying Capability Automotive Temperature Range: -40 C to +125 C Rail-to-Rail Operation 8-Lead MSOP Package 33 ns Switching Times Typical Power Consumption (<0.01 W) TTL/CMOS Compatible Inputs Pin Compatible with ADG721/722/723 APPLICATIONS Power Routing Battery-Powered Systems Communication Systems Data Acquisition Systems Audio and Video Signal Routing Cellular Phones Modems PCMCIA Cards Hard Drives Relay Replacement
S1
<1 CMOS 1.8 V to 5.5 V, Dual SPST Switches ADG821/ADG822/ADG823
FUNCTIONAL BLOCK DIAGRAM
ADG821
S1 IN1 D1 D2 IN2 S2 IN2 S2 D1 D2 IN1
ADG822
ADG823
S1 IN1 D1 D2 IN2 S2
SWITCHES SHOWN FOR A LOGIC "0" INPUT
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG821, ADG822, and ADG823 are monolithic CMOS SPST (single pole, single throw) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. The ADG821, ADG822, and ADG823 are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery-powered instruments. Each switch of the ADG821/ADG822/ADG823 conducts equally well in both directions when on. The ADG821, ADG822, and ADG823 contain two independent SPST switches. The ADG821 and ADG822 differ only in that both switches are normally open and normally closed, respectively. In the ADG823, Switch 1 is normally open and Switch 2 is normally closed. The ADG823 exhibits break-before-make switching action. The ADG821, ADG822, and ADG823 are available in an 8-lead MSOP package.
1. Very Low On Resistance (0.5 typ) 2. On Resistance Flatness (RFLAT(ON)) (0.15 typ) 3. Automotive Temperature Range -40C to +125C 4. 200 mA Current Carrying Capability 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. 8-Lead MSOP Package
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2002
10%, GND = 0 V. All specifications ADG821/ADG822/ADG823-SPECIFICATIONS1 (V =C 5toV+125 C, unless otherwise noted.) -40
DD
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (RON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON tOFF
3
25 C
-40 C to +85 C
-40 C to +125 C2 0 V to VDD
Unit V typ max typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ pF typ pF typ pF typ
Test Conditions/Comments
0.5 0.6 0.16 0.2 0.15 0.23 0.01 0.25 0.01 0.25 0.01 0.25
0.7
0.8
VS = 0 V to VDD, IS = 100 mA; Test Circuit 1 VS = 0 V to VDD, IS = 100 mA VS = 0 V to VDD, IS = 100 mA VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V, or VS = VD = 4.5 V; Test Circuit 3
0.25 0.26
0.28 0.3
3 3 3
25 25 25 2.0 0.8
0.005 0.1 4 33 45 11 16 32
VIN = VINL or VINH
48 19
52 21 1
Break-Before-Make Time Delay, tBBM (ADG823 Only) Charge Injection 15 Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.001 1.0
NOTES 1 Temperature range: Automotive range: -40C to +125C. 2 On resistance parameters tested with I S = 10 mA. 3 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
-52 -82 24 85 98 230
RL = 50 , CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 50 , CL = 35 pF, VS = 3 V; Test Circuit 4 RL = 50 , CL = 35 pF, VS1 = VS2 = 3 V; Test Circuit 5 VS = 2.5 V; RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f =1 MHz; Test Circuit 7 RL = 50 , CL = 5 pF f = 1 MHz; Test Circuit 9 RL = 50 , CL = 5 pF; Test Circuit 8 f =1 MHz f =1 MHz f =1 MHz VDD = 5.5 V Digital Inputs = 0 V or 5.5 V
2.0
A typ A max
-2-
REV. 0
(VDD = 2.7 V to 3.6 V, GND = 0 V. All specifications -40 C to +125 C, unless otherwise noted.)1
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (RON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON tOFF Break-Before-Make Time Delay, tBBM (ADG823 Only) Charge Injection Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.001 1.0
NOTES 1 Temperature range: Automotive range: -40C to +125C. 2 On resistance parameters tested with I S = 10 mA. 3 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
3
ADG821/ADG822/ADG823
Test Conditions/Comments
25 C
-40 C to +85 C
-40 C to +125 C2 0 V to VDD
Unit V typ max typ max typ nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ MHz typ pF typ pF typ pF typ
0.7 1.4 0.16 0.2 0.3 0.01 0.25 0.01 0.25 0.01 0.25
1.5 0.25
1.6 0.28 0.33
VS = 0 V to VDD, IS = 100 mA; Test Circuit 1 VS = 0 V to VDD, IS = 100 mA VS = 0 V to VDD, IS = 100 mA VDD = 3.6 V VS = 3.3 V/1 V, VD = 1 V/3.3 V; Test Circuit 2 VS = 3.3 V/1 V, VD = 1 V/3.3 V; Test Circuit 2 VS = VD = 1 V, or 3.3 V; Test Circuit 3
3 3 3
15 25 25 2.0 0.8
0.005 0.1 4 48 67 12 18 40 2 -52 -82 24 85 98 230
VIN = VINL or VINH
74 20
78 23 1
RL = 50 , CL = 35 pF, VS = 1.5 V; Test Circuit 4 RL = 50 , CL = 35 pF, VS = 1.5 V; Test Circuit 4 RL = 50 , CL = 35 pF, VS1 = VS2 = 1.5V; Test Circuit 5 VS =1.5 V; RS = 0 , CL = 1 nF; Test Circuit 6 RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 RL = 50 , CL = 5 pF; Test Circuit 8 f =1 MHz f =1 MHz f =1 MHz VDD = 3.6 V Digital Inputs = 0 V or 3.6 V
2.0
A typ A max
REV. 0
-3-
Spec RIGHT
ADG821/ADG822/ADG823
ABSOLUTE MAXIMUM RATINGS 1
(TA = 25C, unless otherwise noted.) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +7 V Analog Inputs2 . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Digital Inputs2 . . . . . . . . . . . . . . . . . . -0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA (Pulsed at 1 ms, 10% Duty Cycle max) Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 200 mA Operating Temperature Range Automotive . . . . . . . . . . . . . . . . . . . . . . . -40C to +125C Storage Temperature Range . . . . . . . . . . . . -65C to +150C Junction Temperature (Tj max) . . . . . . . . . . . . . . . . . . . 150C Package Power Dissipation . . . . . . . . . . . . . . (Tj max - TA)/JA 8-Lead MSOP Package JAThermal Impedance . . . . . . . . . . . . . . . . . . . . . 206C/W
JCThermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44C/W Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300C IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . . 235C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.
Table I. Truth Table for the ADG821/ADG822
Table II. Truth Table for the ADG823
ADG821 INx 0 1
ADG822 INx 1 0
Switch x Condition OFF ON
IN1 0 0 1 1
IN2 0 1 0 1
Switch S1 OFF OFF ON ON
Switch S2 ON OFF ON OFF
ORDERING GUIDE
Model Option ADG821BRM ADG822BRM ADG823BRM
*
Temperature Range -40C to +125C -40C to +125C -40C to +125C
Brand* SQB SRB SSB
Package Description MSOP (microSmall Outline IC) MSOP (microSmall Outline IC) MSOP (microSmall Outline IC)
Package RM-8 RM-8 RM-8
Branding on MSOP packages is limited to three characters due to space constraints.
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG821/ADG822/ADG823 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
-4-
REV. 0
ADG821/ADG822/ADG823
PIN CONFIGURATION 8-Lead MSOP (RM-8)
S1 1 V TOP VIEW 8 DD (Not to Scale) D1 2 7 IN1 IN2 3 GND 4
ADG821/ ADG822/ ADG823
6 D2 5 S2
TERMINOLOGY
VDD GND IDD S D IN RON RON RFLAT(ON) IS (OFF) ID (OFF) ID, IS (ON) VD (VS) VINL VINH IINL (IINH) CS (OFF) CD (OFF) CD, CS (ON) tON tOFF tBBM Charge Injection Crosstalk Off Isolation Bandwidth On Response Insertion Loss
Most Positive Power Supply Potential Ground (0 V) Reference Positive Supply Current Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input Ohmic Resistance between D and S On Resistance Match between any Two Channels (i.e., RON max - RON min) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the Switch OFF Drain Leakage Current with the Switch OFF Channel Leakage Current with the Switch ON Analog Voltage on Terminals D and S Maximum Input Voltage for Logic "0" Minimum Input Voltage for Logic "1" Input Current of the Digital Input OFF Switch Source Capacitance OFF Switch Drain Capacitance ON Switch Capacitance Delay between Applying the Digital Control Input and the Output Switching ON Delay between Applying the Digital Control Input and the Output Switching OFF OFF time or ON time measured between the 90% points of both switches, when switching from one address state to another. It is a measure of the glitch impulse transferred from the digital input to the analog output during switching. It is a measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. A Measure of Unwanted Signal Coupling through an OFF Switch The Frequency at which the Output Is Attenuated by -3 dBs The Frequency Response of the ON Switch The Loss due to the On Resistance of the Switch
REV. 0
-5-
ADG821/ADG822/ADG823-Typical Performance Characteristics
0.8 0.7 VDD = 3.0V VDD = 2.7V TA = 25 C 5.0 4.5 4.0 0.6 VDD = 3.3V ON RESISTANCE - TA = 25 C
0.8 VDD = 5V 0.7 0.6
VDD = 1.8V
+125 C
ON RESISTANCE -
0.5 0.4 0.3
VDD = 4.5V
ON RESISTANCE -
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
0.5 0.4 0.3 0.2
+85 C
VDD = 5.0V 0.2 0.1 0 0 1 2 3 VD (VS) - V 4 5 5 VDD = 5.5V
+25 C 0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VD (VS) - V
-40 C
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD (VS) - V
TPC 1. On Resistance vs. VD (VS)
TPC 2. On Resistance vs. VD (VS)
TPC 3. On Resistance vs. VD (VS) for Different Temperatures
0.8 0.7 +125 C 0.6
ON RESISTANCE -
8 7 VDD = 5V, 3V
200 TA = 25 C 150
CHARGE INJECTION - pC
VDD = 5V
+85 C
CURRENT - nA
6 5 4 3 2 1 ID (OFF) IS, I D (ON)
100 50 VDD = 3V 0 -50 -100 -150 -200
0.5 0.4 0.3 +25 C 0.2 0.1 VDD = 3V 0 0 0.5 1.0 1.5 2.0 VD (VS) - V 2.5 3.0 -40 C
0 -1 0 20
IS (OFF) 40 60 80 100 TEMPERATURE - C 120 125
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Vs - V
TPC 4. On Resistance vs. VD (VS) for Different Temperatures
TPC 5. Leakage Currents vs. Temperature
TPC 6. Charge Injection vs. Source Voltage
60 TA = 25 C 50 VDD = 3V
ATTENUATION - dB
0 -10 -20 -30 -40 -50 -60 -70 0.2 VDD = 3V, 5V TA = 25 C
ATTENUATION - dB
0 -1 -2
40
TIME - ns
tON
-3 -4 -5 -6 -7 -8 -9 VDD = 3V, 5V TA = 25 C 0.1 1 10 FREQUENCY - MHz 100
VDD = 5V
30
20 tOFF 10 VDD = 3V, 5V
0 -40 -20
0
20 40 60 80 100 1200 TEMPERATURE - C
1
10 FREQUENCY - MHz
100
TPC 7. tON/tOFF vs. Temperature
TPC 8. Off Isolation vs. Frequency
TPC 9. On Response vs. Frequency
-6-
REV. 0
ADG821/ADG822/ADG823
-10 -20 -30
ATTENUATION - dB
1.8
LOGIC THRESHOLD VOLTAGE - V
0.050 0.045 0.040
VIN RISING VIN FALLING
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.4 0 0 1 2 3 VDD - V 4 5 6
VS = 5V VP-P = 2V RL = 600
-40 -50 -60 -70 -80 -90
0.035
THD - %
0.030 0.025 0.020 0.015 0.010 0.005 20 100 1K FREQUENCY - Hz 10K
-100 -110 0.1 1 10 FREQUENCY - MHz 100
TPC 10. Crosstalk vs. Frequency
TPC 11. Logic Threshold Voltage vs. Suppply Voltage
TPC 12. THD
REV. 0
-7-
ADG821/ADG822/ADG823 Test Circuits
IDS
IS (OFF) ID (OFF) S D A VD NC = NO CONNECT NC S D ID (ON) A VD
V1
A
S
D
VS
VS
RON = V1/IDS
Test Circuit 1. On Resistance
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
VDD 0.1 F 50% 50%
VDD S VS D RL 50 GND VOUT CL 35pF
VIN ADG821 VIN
ADG822
50% 90%
50% 90%
IN
VOUT tON tOFF
Test Circuit 4. Switching Times
VDD 0.1 F
VDD VS1 VS2 S1 S2 IN1, IN2 VIN GND D1 D2 RL2 50 VOUT2 CL2 35pF RL1 50 CL1 35pF VOUT1
VIN
0V
50% 90%
50% 90%
VOUT1 0V
VOUT2 0V
90%
90%
tBBM
tBBM
Test Circuit 5. Break-Before-Make Time Delay, tBBM (ADG823 only)
VDD VDD RS VS S D CL 1nF VOUT GND QINJ = CL VOUT VOUT VOUT VIN SW ON SW OFF
IN
Test Circuit 6. Charge Injection
-8-
REV. 0
ADG821/ADG822/ADG823
VDD 0.1 F NETWORK ANALYZER
VDD 0.1 F
VDD S IN D VIN GND 50
VDD S
NETWORK ANALYZER
50 VS VOUT
50 VS D VOUT
IN
RL 50
VIN GND
RL 50
OFF ISOLATION = 20 LOG
VOUT VS
INSERTION LOSS = 20 LOG
VOUT WITH SWITCH VOUT WITHOUT SWITCH
Test Circuit 7. Off Isolation
VDD 0.1 F NETWORK ANALYZER VOUT S1 RL 50 S2 50 VS GND IN D R 50
Test Circuit 8. Bandwidth
VDD
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
VOUT VS
Test Circuit 9. Channel-to-Channel Crosstalk
REV. 0
-9-
ADG821/ADG822/ADG823
OUTLINE DIMENSIONS 8-Lead MSOP Package [MSOP] (RM-8)
Dimensions shown in millimeters
3.00 BSC
8
5
3.00 BSC
1
4.90 BSC
4
PIN 1 0.65 BSC
0.15 0.00 0.38 0.22
1.10 MAX
0.23 0.08
SEATING PLANE
8 0
0.80 0.40
COMPLIANT TO JEDEC STANDARDS MO-187AA
-10-
REV. 0
-11-
-12-
C02851-0-8/02(0)
PRINTED IN U.S.A.
This datasheet has been download from: www..com Datasheets for electronics components.

▲Up To Search▲

Price & Availability of ADG821BRM

	To Download ADG821BRM Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .